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EXCITATION SPECTRA OF SHALLOW DONORS IN GAP.SCOTT W.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3173-3175; BIBL. 20 REF.Article

Validity of the effective-mass approximation for shallow impurity states in narrow superlatticesPRIESTER, C; ALLAN, G; LANNOO, M et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 12, pp 7194-7200, issn 0163-1829Article

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RESIDUAL DONOR IMPURITIES IN VAPOR PHASE EPITAXIAL GALLIUM ARSENIDE.OZEKI M; KITAHARA K; NAKAI K et al.1977; FUJITSU SCI. TECH. J.; JAP.; DA. 1977; VOL. 13; NO 2; PP. 77-91; BIBL. 14 REF.Article

VALLEY-ORBIT INTERACTION AND EFFECTIVE-MASS THEORY FOR INDIRECT GAP SEMICONDUCTORS.HERBERT DC; INKSON J.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 24; PP. L695-L698; BIBL. 10 REF.Article

SHALLOW ACCEPTOR BINDING ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM ARSENIDE.KAMIYA T; WAGNER E.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3219-3223; BIBL. 32 REF.Article

SUBSTITUTIONAL DONORS AND CORE EXCITONS IN MANY-VALLEY SEMICONDUCTORSALTARELLI M.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 3; PP. 205-208Article

IONIZATION ENERGY OF QUENCHED-IN SHALLOW ACCEPTORS IN GERMANIUMKAMIURA Y; TAKADA T; HASHIMOTO F et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. K141-K144; BIBL. 9 REF.Article

THE EFFECT OF STRESS ON THE ACCEPTOR GROUND STATE IN GERMANIUMBUCZKO R; BLINOWSKI J; CHROBOCZEK JA et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 1; PP. 71-83; BIBL. 27 REF.Article

LARGE BINDING DUE TO DISPERSIVE SCREENING AND BLOCH FUNCTION INTERFERENCE IN MANY-VALLEY SEMICONDUCTORSRESCA L; RESTA R.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 3; PP. 275-277; BIBL. 15 REF.Article

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THEORY OF SILICON HYPERFINE INTERACTIONS WITH SHALLOW-DONOR ELECTRONS: A REPLY.MIEHER RL.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 2069-2072; BIBL. 8 REF.Article

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